JODHPUR INSTITUTE OF ENGINEERING & TECHNOLOGY DEPARTMENT OF ELECTRONICS AND conversation LITERATURE SURVEY 1.unstructured GeCu alloy for low temperature resistor prevarication:- Author:-T. K. S. Wong and S. G. Ingram Dept. of engineer, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, linked Kingdom GEC Marconi Ltd., Hirst Research Centre, East Lane, Wembley, Middlesex HA9 7PP, united Kingdom. daybook of use Physics / Volume 73 / supply 6 (Received 28 kinsfolk 1992; accepted 3 declination 1992) Introduction:- Amorphous germaniumcopper alloy films (a?Ge1?xCux, 0.01?x?0.3) have been deposited and characterized at temperatures mess to 3.9 K. The sheet resistivities of these films mess be controlled by varying their copper content and are good higher than common nice film resistor materials. The films can be readily imitate by either blotto etching or revolutionise?off and are potentially useful for fabricating the high resistances requisi te for observing the Coulomb prevent in single delve junctions. 2.On the fabrication of resistor-shaped ZnO nanowires:- Author:- Yang, Y.; Sun, Xiao Wei.; Tay, B. K.; Xu, C. X.; Dong, Zhi Li.; Vayssieres, L. DRNTU:Engineering:Materials,School of Materials Science and Engineering.

Journal Article Series/ Journal gentle: Physica E (Received 26 direful 1999; accepted 5 kinfolk 1999) Introduction:- A legend morphology of zinc oxide (ZnO) consisting of resistor-shaped nanowires machine-accessible in-series has been synthesized by a drying up phase transport system in the presence of water and copper. Scanning electron microscopy showed that the diameter of nanowires changes a bruptly from ~200 to ~20 nm and forms a resi! stor-shaped nanostructure. transmittance electron microscopy and selected-area electron diffraction revealed a grain boundary at the thicker center (200 nm) and the nanowires were composed of a pair of crystallites of wurtzite ZnO growing along ±[0001] directions. A growth mechanism is proposed...If you want to get a full essay, order it on our website:
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